UTM4052L-S08-R datasheet(1/14 Pages) VBSEMI

部件名	UTM4052L-S08-R

功能描述	N- and P-Channel 60-V (D-S) MOSFET

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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N- and P-Channel 60-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

APPLICATIONS

•

CCFL Inverter

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

N-Channel

60

0.0

28 at V

GS = 10 V

5.3

6 nC

0.0

31 at V

GS = 4.5 V

4.7

P-Channel

- 60

0.

050 at V

GS = - 10 V

-

4.9

8 nC

0.

060 at V

GS = - 4.5 V

-

4.5

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

2

3

4

1

N-Channel MOSFET

D1

G1

S1

S2

G2

D2

P-Channel MOSFET

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

60

- 60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

5.3

-

4.9

A

TC = 70 °C

4.3

-

4.2

TA = 25 °C

4.3b, c

-

4.0b, c

TA = 70 °C

3.4b, c

-

3.4b, c

Pulsed Drain Current (10 µs Pulse Width)

IDM

20

- 25

Source Drain Current Diode Current

TC = 25 °C

IS

2.6

- 2.8

TA = 25 °C

1.7b, c

- 1.7b, c

Pulsed Source-Drain Current

ISM

20

- 25

Single Pulse Avalanche Current

L = 0.1 mH

IAS

11

15

Single Pulse Avalanche Energy

EAS

6.1

11

mJ

Maximum Power Dissipation

TC = 25 °C

PD

3.1

3.4

W

TC = 70 °C

22.2

TA = 25 °C

2b, c

TA = 70 °C

1.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N-Channel

P-Channel

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

55

62.5

53

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

33

40

30

37

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UTM4052L-S08-R

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