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STTH40P03ST 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH40P03ST
功能描述  ULTRAFAST RECTIFIER PDP ENERGY RECOVERY
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH40P03ST 数据表(HTML) 4 Page - STMicroelectronics

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Figure
5:
Relative
variation
of
thermal
impedance junction to case versus pulse
duration (TO-220FPAB)
Figure 6: Peak reverse recovery current versus
dIF/dt (typical values)
Figure 7: Reverse recovery time versus dIF/dt
(typical values)
Figure 8: Reverse recovery softness factor
versus dIF/dt (typical values)
Figure 9: Relative variations of dynamic
parameters versus junction temperature
Figure 10: Transient peak forward voltage
versus dIF/dt (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z/R
th(j-c)
th(j-c)
Single pulse
t (s)
p
TO-220FPAB
0
2
4
6
8
10
12
14
16
18
20
0
100
200
300
400
500
600
700
800
900
1000
I
(A)
RM
dI /dt(A/µs)
F
II
F
F(AV)
≤
V =100V
T =100°C
R
j
0
5
10
15
20
25
30
35
40
45
50
55
60
0
100
200
300
400
500
600
700
800
900
1000
t (ns)
rr
dI /dt(A/µs)
F
II
F
F(AV)
≤
V =100V
T =100°C
R
j
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
100
200
300
400
500
600
700
800
900
1000
S factor
dI /dt(A/µs)
F
II
F
F(AV)
≤
V =100V
T =100°C
R
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
20
30
40
50
60
70
80
90
100
T (°C)
j
I=I
Reference: T =100°C
FF(AV)
j
V =100V
R
S factor
IRM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
100
200
300
400
500
600
700
800
900
1000
V
(V)
FP
dI /dt(A/µs)
F
I=I
T =100°C
F
F(AV)
j



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