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STTH40P03SW 数据表(PDF) 2 Page - STMicroelectronics |
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STTH40P03SW 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() STTH40P03S 2/8 Table 4: Thermal Parameters Table 5: Static Electrical Characteristics Pulse test: * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.88 x IF(AV) + 0.0135 IF 2 (RMS) Table 6: Switching Characteristics Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB / TO-247 1.15 °C/W TO-220FPAB 4.5 Zth(j-c) Transient thermal resistance at 1µs 0.002 °C/W Symbol Parameter Test conditions Min. Typ Max. Unit IR * Reverse leakage current Tj = 25°C VR = VRRM 50 µA Tj = 125°C 0.05 0.5 mA VF ** Forward voltage drop Tj = 25°C IF = 20A 1.5 V Tj = 125°C 0.9 1.15 Tj = 25°C IF = 40A 1.1 1.8 V Tj = 125°C 1.42 Symbol Parameter Test conditions Min. Typ Max. Unit IRM Reverse recovery cur- rent Tj = 100°C IF = 40A VR = 100V dIF/dt = 200 A/µs 56.5 A Sfactor Softness factor 0.5 - |
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