2SC5302 datasheet(1/2 Pages) ISC

部件名	2SC5302

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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isc website：www.iscsemi.com

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isc Silicon NPN Power Transistor

2SC5302

DESCRIPTION

·

High Breakdown Voltage

:VCBO= 1500V (Min)

·

High Speed Switching

·

High Reliability

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for inverter lighting applications.

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

35

A

PC

Collector Power Dissipation

@Ta=25℃

3

W

Collector Power Dissipation

@TC=25℃

75

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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