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ARS35 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

部件名 ARS35
功能描述  35.0 AMPS. High Current Plastic Silicon Rectifiers
PDF  2 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

ARS35 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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ARS35 / AR35
35.0 AMPS. High Current Plastic Silicon Rectifiers
Voltage Range
50 to 1000 Volts
Current
35.0 Amperes
Features
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Low cost construction utilizing void-free molded
plastic technique
Low cost
Diffused junction
Low leakage
High surge capability
High temperature soldering guaranteed:
260
oC for 10 seconds
Mechanical Data
Case: Molded plastic case
Terminals: Plated terminals, solderable per MIL-
STD-202, Method 208
Polarity: Color ring denotes cathode end
Weight: 0.07 ounce, 1.8 grams
Mounting position: Any
ARS
AR
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
ARS
35A
ARS
35B
ARS
35D
ARS
35G
ARS
35J
ARS
35K
ARS
35M
Type Number
Symbol
AR
35A
AR
35B
AR
35D
AR
35G
AR
35J
AR
35K
AR
35M
Units
Maximum Recurrent Peak Revere Voltage
VRRM
50
100
200
400
600
800 1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800 1000
V
Maximum Average Forward Rectified Current
@Tc = 150
I(AV)
35
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method ) at TJ=150
oC
IFSM
500
A
M
aximum Instantaneous Forward Voltage
@ 35A
VF
1.0
V
Maximum DC Reverse Current @ Tc=25
at Rated DC Blocking Voltage @ Tc=100
IR
5.0
250
uA
uA
Typical Reverse Recovery Time (Note 2)
Trr
3.0
uS
Typical Junction Capacitance ( Note 1 )
TJ=25
oC
Cj
300
pF
Typical Thermal Resistance ( Note 3 )
R
θJC
1.0
℃/W
O
perating and Storage Temperature Range
TJ, TSTG
-50 to +175
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, Singe Side Cooled.


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