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IXTH50P10 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTH50P10 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor IXTH50P10 · FEATURES · Static drain-source on-resistance: RDS(on) ≤ 55mΩ@VGS= -10V · Fully characterized avalanche voltage and current · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATION · Switched mode power supplies · Uninterruptible power supplies · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pulsed -200 A PD Total Dissipation @TC=25℃ 300 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance 0.42 ℃ /W |
类似零件编号 - IXTH50P10 |
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类似说明 - IXTH50P10 |
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