FTC2983 datasheet(1/2 Pages) FS

部件名	FTC2983

功能描述	Power Amplifier Applications

PDF	2 Pages

Scroll/Zoom	100%

制造商	FS [First Silicon Co., Ltd]

网页	http://www.firstsilicon.co.kr/

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1 / 2 page

2011. 12. 26

1/2

SEMICONDUCTOR

TECHNICAL DATA

FTC2983

Revision No : 0

DPAK

DIM

MILLIMETERS

A

B

C

D

F

H

I

J

L

6 50 ± 0 2

5 60 ± 0 2

5 20 ± 0 2

1 50 ± 0 2

2 70 ± 0 2

2 30 ± 0 1

1 00 MAX

2 30 ± 0 2

0 5 ± 0 1

0 50 ± 0 10

E

1 6 ± 0 2

O

A

C

I

J

H

F

L

1

2

3

1 BASE

2 COLLECTOR

3 EMITTER

0 95 MAX

Q

c

m

f r

High transition frequency: fT = 100 MHz (typ.)

Complementary to FTA1225

t

i

n

U

e

u

l

a

V

r

e

t

e

m

a

r

a

P

l

o

b

m

y

S

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

V

5

e

g

a

t

l

o

V

e

s

a

B

-

r

e

t

i

m

E

IC

A

5

.

1

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

PC

W

1

n

o

i

t

a

p

i

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

RθJA

Thermal Resistance From Junction To Ambient

125

℃/W

Tj

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

℃

Tstg

0

5

1

+

~

5

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

℃

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

t

i

n

U

x

a

M

p

y

T

n

i

M

s

n

o

i

t

i

d

n

o

c

t

s

e

T

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

Collector-base breakdown voltage

V(BR)CBO

IC=1mA,IE=0

160

V

Collector-emitter breakdown voltage

V(BR)CEO

*

IC=10mA,IB=0

160

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA,IC

5

0

=

V

Collector cut-off current

ICBO

VCB=160V,IE=0

1

μA

Emitter cut-off current

IEBO

VEB=5V,IC

1

0

=

μA

DC current gain

hFE

VCE=5V, IC=100mA

70

240

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=50mA

1.5

V

Base-emitter voltage

VBE

VCE=5V, IC=500mA

1

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

25

pF

Transition frequency

fT

VCE=10V,IC=100mA,

100

MHz

*Pulse test

CLASSIFICATION OF hFE

Y

O

K

N

A

R

RANGE

0

4

2

-

0

2

1

0

4

1

-

0

7

类似零件编号 - FTC2983

制造商	部件名	数据表	功能描述
First Silicon Co., Ltd	FTC2314	351Kb / 3P	TRANSISTOR (NPN)
	FTC2316	73Kb / 2P	TRANSISTOR (NPN)
	FTC2328A	120Kb / 2P	Audio power amplifier
	FTC2330	108Kb / 2P	TRANSISTOR (NPN)
	FTC2383	240Kb / 3P	TRANSISTOR (NPN)

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类似说明 - FTC2983

制造商	部件名	数据表	功能描述
Unisonic Technologies	2SC2881	115Kb / 3P	VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS
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Toshiba Semiconductor	2SA1201	146Kb / 4P	Voltage Amplifier Applications Power Amplifier Applications
	2SA1202	130Kb / 4P	Power Amplifier Applications Voltage Amplifier Applications
	2SA1734	167Kb / 5P	Power Amplifier Applications Power Switching Applications
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	2SA1202	142Kb / 4P	Power Amplifier Applications Voltage Amplifier Applications
	2SC2881	146Kb / 4P	Voltage Amplifier Applications Power Amplifier Applications
	2SC2882	125Kb / 4P	Power Amplifier Applications Voltage Amplifier Applications
Unisonic Technologies	2SC2881	175Kb / 4P	VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS