TPC6103 datasheet(1/7 Pages) TOSHIBA

部件名	TPC6103

功能描述	Silicon P Channel MOS Type (U-MOS III)

PDF	7 Pages

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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1 / 7 page

TPC6103

2004-07-06

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

TPC6103

Notebook PC Applications

Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 13 S (typ.)

• Low leakage current: IDSS = −10 µA (max) (VDS = −12 V)

• Enhancement mode: Vth = −0.5 to −1.2 V

(VDS = −10 V,ID = −200 µA)

Maximum Ratings (Ta

= 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

−12

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−12

V

Gate-source voltage

VGSS

±8

V

DC

(Note 1)

ID

−5.5

Drain current

Pulse (Note 1)

IDP

−22

A

Drain power dissipation

(t

= 5 s)

(Note 2a)

PD

2.2

W

Drain power dissipation

(t

= 5 s)

(Note 2b)

PD

0.7

W

Single pulse avalanche energy

(Note 3)

EAS

5.3

mJ

Avalanche current

IAR

−2.75

A

Repetitive avalanche energy (Note 4)

EAR

0.22

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to

ambient (t

= 5 s)

(Note 2a)

Rth (ch-a)

56.8

°C/W

Thermal resistance, channel to

ambient (t

= 5 s)

(Note 2b)

Rth (ch-a)

178.5

°C/W

Note 1, (ote 2, Note 3, Note 4 and Note 5: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3T1A

Weight: 0.011 g (typ.)

Circuit Configuration

6

4

1

2

3

5

类似零件编号 - TPC6103

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Toshiba Semiconductor	TPC6103	282Kb / 7P	Notebook PC Applications Portable Equipment Applications
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