Preliminary Data Sheet

2.1

1

Preliminary specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com

Contact Details (USA): Tel: +1 (408) 850-5790

Fax: +1 (408) 850-5766

Website: www.filtronic.com

FMS2003QFN-1

High Power Reflective GaAs SP4T Switch

Features:

♦ 3x3x0.9mm Packaged pHEMT Switch

♦ NiPdAu finish for Military and High

reliability applications

♦ Excellent low control voltage performance

♦ Excellent harmonic performance under

GSM/DCS/PCS/EDGE power levels

♦ High isolation: >30dB at 0.9GHz

♦ Low Insertion loss: 0.5dB at 0.9GHz

♦ Low control current

Functional Schematic

Description and Applications:

The FMS2003QFN is a low loss, high power and linear single pole four throw Gallium Arsenide

antenna switch designed for use in mobile handset applications. The die is fabricated using the

Filtronic FL05 0.5

µm switch process technology, which offers excellent performance optimised for

switch applications. The FMS2003QFN is designed for use in dual/tri and quad band GSM handset

antenna switch modules and RF front-end modules. It can also find use in other applications where

high power and linear RF switching is necessary.

Parameter

Test Conditions

Min

Typ

Max

Units

Insertion Loss

0.5 – 1.0 GHz

1.0 – 2.0 GHz

<0.62

<0.65

dB

dB

Return Loss

0.5 – 2.5 GHz

20

dB

Isolation

0.5 – 1.0 GHz

1.0 – 2.0 GHz

>30

>26

dB

dB

2nd Harmonic Level

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +33dBm, 100% Duty Cycle

-69

-67

dBc

dBc

3rd Harmonic Level

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +33dBm, 100% Duty Cycle

-69

-70

dBc

dBc

Switching speed : Trise, Tfall

10% to 90% RF

90% to 10% RF

<0.15

<0.06

µs

µs

P0.1dB

0.5 – 1.0 GHz

1.0 – 2.0 GHz

38

38

dBm

IP3

0.5 – 1.0 GHz

1.0 – 2.0 GHz

>65

>62

dBm

Cross modulation

Tx1 836Hz Tx2 837MHz +21dBm Rx1 880MHz –25dBm

Tx1 1879.5MHz Tx2 1880.5MHz +21dBm,Rx1 1960MHz –25dBm

>110

dBm

Control Current

+35dBm RF input @1GHz

<10

µA

ANT

RF1

RF3

RF2

RF4