IR2213(S)PBF

1

www.irf.com

© 2016 International Rectifier

April 26, 2016

High and Low Side Driver

Ordering Information

Features



Floating channel designed for bootstrap operation



Fully operational to +1200 V



Tolerant to negative transient voltage



dV/dt immune



Gate drive supply range from 12 V to 20 V



Undervoltage lockout for both channels



3.3 V logic compatible



Separate logic supply range from 3.3 V to 20 V



Logic and power ground ±5 V offset



CMOS Schmitt-triggered inputs with pull-down



Cycle by cycle edge-triggered shutdown logic



Matched propagation delay for both channels



Outputs in phase with inputs

Description

The IR2213(S) is a high voltage, high speed power

MOSFET and IGBT driver with independent high and low

side referenced output channels. Proprietary HVIC and

latch immune CMOS technologies enable ruggedized

monolithic construction. Logic inputs are compatible with

standard CMOS or LSTTL outputs, down to 3.3 V logic.

The output drivers feature a high pulse current buffer stage

designed

for

minimum

driver

cross-conduction.

Propagation delays are matched to simplify use in high

frequency applications. The floating channel can be used

to drive an N-channel power MOSFET or IGBT in the high

side configuration which operates up to 1200 V.

Product Summary

1200 V

1.7 A / 2 A

12 V

– 20 V

280 ns / 225 ns

Delay Matching

30 ns

Package Options

16 Lead SOIC

14 Lead PDIP

(Wide Body)

Base Part Number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IR2213SPBF

SO16WB

Tube

45

IR2213SPBF

IR2213SPBF

SO16WB

Tape and Reel

1000

IR2213STRPBF

IR2213PBF

PDIP14

Tube

25

IR2213PBF