PRELIMINARY

FPD10000AF

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis

Revised: 12/07/04

Fax: +1 408 850-5766

Email: sales@filcsi.com

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BIASING GUIDELINES

Dual-bias (separate positive Drain and negative Gate supplies) circuits are recommended,

requiring a regulated negative voltage supply for depletion-mode devices such as the

FPD10000AF. The Gate bias supply should be capable of sinking / sourcing at least 10mA of

current. The bias circuitry must be properly sequenced to ensure that the control Gate voltage

(typically -0.6 to -1.0V) is applied to the device before the Drain voltage, otherwise large

amounts of Drain-Source current will be drawn, potentially leading to instability and self-

oscillation.

The recommended 180 – 300 mA bias point is nominally a Class B/AB mode. A small amount

of RF gain expansion prior to the onset of compression is normal for this operating point, and

significant current drive-up should be expected. If a Class A operation is desired, users should

check the de-rating limits given in the previous section to ensure reliable operation.

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PACKAGE OUTLINE

(dimensions in millimeters – mm)

All information and specifications subject to change without notice.

PACKAGE MARKING CODE

Example:

f1ZD

P3F

f = Filtronic

1ZD = Lot and Date Code

P2F = Status, Part Code, Part Type

Status: D=Development P = Production

Part Code denotes model (e.g. FPD10000AF)

Part Type: F = FET (pHEMT)