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TS7809BCZ 数据表(PDF) 6 Page - Taiwan Semiconductor Company, Ltd |
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TS7809BCZ 数据表(HTML) 6 Page - Taiwan Semiconductor Company, Ltd |
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6 / 8 page ![]() TS7800B series 6-6 2005/01 rev. A TS7824B Electrical Characteristics (Vin=33V, Iout=500mA, 0 oC≤Tj≤125oC, Cin=0.33uF, Cout=0.1uF; unless otherwise specified.) Parameter Symbol Test Conditions Min Typ Max Unit Tj=25 oC 23.04 24 24.96 Output Voltage Vout 27V ≤Vin≤38V, 10mA≤Iout≤1.5A, PD ≤15W 22.80 24 25.20 V 27V ≤Vin≤38V -- 18 480 Line Regulation REGline Tj=25 oC 28V ≤Vin≤32V -- 6 240 10mA ≤Iout≤1.5A -- 12 480 Load Regulation REGload Tj=25 oC 250mA ≤Iout≤750mA -- 4 240 mV Quiescent Current Iq Iout=0, Tj=25 oC -- 4.6 8 27V ≤Vin≤38V -- -- 1 Quiescent Current Change ∆Iq 10mA ≤Iout≤1.5A -- -- 0.5 mA Output Noise Voltage Vn 10Hz ≤f≤100KHz, Tj=25oC -- 170 -- uV Ripple Rejection Ratio RR f=120Hz, 27V ≤Vin≤37V 54 70 -- dB Voltage Drop Vdrop Iout=1.0A, Tj=25 oC -- 2 -- V Output Resistance Rout f=1KHz -- 28 -- m Ω Output Short Circuit Current Ios Tj=25 oC -- 150 -- mA Peak Output Current Io peak Tj=25 oC -- 2.2 -- A Temperature Coefficient of Output Voltage ∆Vout/ ∆Tj Iout=10mA, 0 oC≤Tj≤125oC -- -1.5 -- mV/ oC Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as possible, and thermal effects must be taken into account separately. This specification applies only for DC power dissipation permitted by absolute maximum ratings. |
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