IXTQ200N10T datasheet(1/2 Pages) ISC

部件名	IXTQ200N10T

功能描述	isc N-Channel MOSFET Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1

isc N-Channel MOSFET Transistor

IXTQ200N10T

·

FEATURES

·

Drain Source Voltage-

: VDSS= 100V(Min)

·

Static Drain-Source On-Resistance

: RDS(on) = 5.5mΩ(Max)

·

Fast Switching

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·

APPLICATIONS

·

Switch-Mode and Resonant-Mode Power Supplies

·

DC-DC Converters

·

AC and DC Motor Drives

·

Robotics and Servo Controls

·

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage-Continuous

±

30

V

ID

Drain Current-Continuous

200

A

IDM

Drain Current-Single Plused

500

A

PD

Total Dissipation @TC=25℃

550

W

Tj

Max. Operating Junction Temperature

-55~175

℃

Tstg

Storage Temperature

-55~175

℃

·

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.27

℃

/W

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