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TSM4835CS 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM4835CS 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  TSM4835 1-5 2003/12 rev. A TSM4835 30V P-Channel Enhancement Mode MOSFET VDS = - 30V RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18mΩ RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance High gate voltage Ordering Information Part No. Packing Package TSM4835CS Tape & Reel SOP-8 Block Diagram Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 25 V Continuous Drain Current, VGS @4.5V. ID - 9.5 A Pulsed Drain Current, VGS @4.5V IDM - 50 A Ta = 25 oC 2.5 W Maximum Power Dissipation Ta > 25 oC PD 1.6 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Ambient Thermal Resistance (PCB mounted) Rθja 50 oC/W Note: Surface mounted on FR4 board t<=5sec. Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain |
类似零件编号 - TSM4835CS |
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类似说明 - TSM4835CS |
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