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STM6930 数据表(PDF) 3 Page - SamHop Microelectronics Corp. |
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STM6930 数据表(HTML) 3 Page - SamHop Microelectronics Corp. |
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3 / 7 page ![]() S T M6930 Parameter S ymbol Condition Min Typ Max Unit E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS Diode Forward Voltage VSD VGS = 0V, Is =1.7A 0.8 1.2 V b C Notes c.Guaranteed by design, not subject to production testing. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Drain C urrent and Temperature F igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V GS , G ate-to-S ource Voltage (V ) V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A) a.Surface Mounted on FR 4 Board, t 10sec. 3 20 16 12 8 4 0 0 1 2 3 4 5 6 V GS =10,9,8,7,6,5V V GS =4V -55 C 25 C 25 20 15 10 5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 T j=125 C T j=( C ) 1.6 1.4 1.2 1.0 0.6 0.4 0 0 50 100 V GS =10V 1500 1250 1000 750 500 250 0 0 5 10 15 20 25 30 C iss C oss C rss V GS =3V -25 25 75 125 150 -50 V GS =10V ID=4.8A d.Guaranteed when external R g=6 ohm and tf < tf max |
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