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AM29LV033MU 数据表(PDF) 21 Page - Advanced Micro Devices

部件名 AM29LV033MU
功能描述  32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
PDF  56 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29LV033MU 数据表(HTML) 21 Page - Advanced Micro Devices

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November 11, 2002
Am29LV033MU
21
ADV ANCE
I N FO RMAT I O N
Table 6.
CFI Query Identification String
Table 7.
System Interface String
Addresses
Data
Description
10h
11h
12h
51h
52h
59h
Query Unique ASCII string “QRY”
13h
14h
02h
00h
Primary OEM Command Set
15h
16h
40h
00h
Address for Primary Extended Table
17h
18h
00h
00h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
00h
00h
Address for Alternate OEM Extended Table (00h = none exists)
Addresses
Data
Description
1Bh
27h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
36h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
V
PP Min. voltage (00h = no VPP pin present)
1Eh
00h
V
PP Max. voltage (00h = no VPP pin present)
1Fh
07h
Typical timeout per single byte write 2
N µs
20h
07h
Typical timeout for Min. size buffer write 2
N µs (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2
N ms
22h
00h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
01h
Max. timeout for byte write 2
N times typical
24h
05h
Max. timeout for buffer write 2
N times typical
25h
04h
Max. timeout per individual block erase 2
N times typical
26h
00h
Max. timeout for full chip erase 2
N times typical (00h = not supported)



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