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HM2802 数据表(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM2802 数据表(HTML) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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4 / 12 page ![]() 30V 1.5A 1MHz Sync Step-Down Dimmable LED Driver Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL). Thermal Information Item Description Value Unit RθJA Junction-to-ambient thermal resistance (1)(2) 105 °C/W RθJC(top) Junction-to-case (top) thermal resistance 55 °C/W RθJB Junction-to-board thermal resistance 17.5 °C/W ψJT Junction-to-top characterization parameter 3.5 °C/W ψJB Junction-to-board characterization parameter 17.5 °C/W Note (1): The package thermal impedance is calculated in accordance to JESD 51-7. Note (2): Thermal Resistances were simulated on a 4-layer, JEDEC board Electrical Characteristics (1) (2) VIN=12V, TA=25°C, unless otherwise specified. Parameter Test Conditions Min Typ. Max Unit Input Voltage Range 4.5 30.0 V Under-Voltage Lockout Threshold Wake up VIN Voltage 4.1 4.4 V Shutdown VIN Voltage 3.3 3.7 V Hysteresis VIN voltage 400 mV Shutdown Supply Current 170 250 µA Quiescent Current VDIM=2V, VFB=0.105V 2.5 mA Over Input Voltage 31.4 V Feedback Reference Voltage VDIM=1.2V 94 100 106 mV Feedback Min Reference Voltage VDIM=0.65V 3 5 7 mV High-Side FET On-Resistance 100 120 140 mΩ High-Side FET Peak Current Limit TON<300nS 3 3.5 4 A Low-Side FET On-Resistance 60 70 80 mΩ Low-Side FET Valley Current Limit 2.1 2.5 2.8 A Analog Dimming Voltage 0.65 1.2 V Dimming ON Threshold 0.67 V Dimming OFF Threshold 0.55 V Bias Voltage For High FET Driver 4.5V≤VIN≤30V 3 V Operation Frequency 0.8 1.0 1.2 MHz Minimum On Time 80 100 nS Minimum Off Time 80 100 nS Max Duty Cycle 85% Thermal Shutdown 160 ℃ Thermal Hysteresis 20 ℃ Note (1): MOSFET on-resistance specifications are guaranteed by correlation to wafer level measurements. Note (2): Thermal shutdown specifications are guaranteed by correlation to the design and characteristics analysis. |
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