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ISCP207N 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 ISCP207N
功能描述  isc Silicon PNP Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCP207N 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCP207N Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCP207N Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
ISCP207N
DESCRIPTION
·
High Collector Current-IC= -1A
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO ≥ -200V
·
Low Collector Saturation Voltage-
: VCE(sat)≤ -2.0V @IC= -7A
·
Good Linearity of hFE
·
Complement to Type ISCN207N
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25℃
120
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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