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BAS85 数据表(PDF) 1 Page - EIC discrete Semiconductors |
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BAS85 数据表(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() BAS85 SCHOTTKY BARRIER DIODE FEATURES : * For general purpose applications. * This diode features low turn-on voltage. * This device isprotected by a PN junction guard guard ring against excessive voltage, such as electrostatic discharges * This diode is also available in the DO-35 case with type designation BAT85. * Pb / RoHS Free MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Symbol Value Unit Continuous Reverse Voltage VR V Continuous Forward Current IF mA Peak Forward Current IFM mA Forward Surge Current (tp < 1s) IFSM mA Power Dissipation (Infinite Heatsink) PD mW Thermal Resistance Junction to Ambient Air RθJA °C/W Junction Temperature TJ °C Storage temperature range TSTG °C Note: (1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics (Ta = 25 °C unless otherwise noted) Parameter Symbol Min Typ Max Unit Reverse Breakdown Voltage V(BR)R 30 - - V Reverse Current IR VR = 25 V - 0.2 2.0 μA IF = 1mA - - 0.32 Forward Voltage IF = 10mA - - 0.40 Pulse Test tp <300 μs , δ <2% IF = 30mA - 0.5 - IF = 100mA - - 0.80 Diode Capacitance Cd VR = 1V, f = 1MHz - - 10 pF IF =10mA to IR = 10mA , measured at IR = 1mA Page 1 of 2 Rev. 03 : July 16, 2010 Test Condition Parameter Reverse Recovery Time VF Trr V ns IR = 10 µA (pulsed) 5 - - 125 -55 to + 150 30 200 (1) 300 (1) 600 (1) 200 (1) 430 (1) Dimensions in inches and ( millimeters ) 0.142(3.6) 0.134(3.4) φ 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) Cathode Mark MiniMELF (SOD-80C) Mounting Pad Layout 0.049 (1.25)Min. 0.197 (5.00) REF 0.098 (2.50) Max. 0.079 (2.00)Min. www.eicsemi.com |
类似零件编号 - BAS85 |
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类似说明 - BAS85 |
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