PJM138NSA datasheet(1/6 Pages) PJSEMI

部件名	PJM138NSA

功能描述	N- Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

制造商	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

网页	http://www.pingjingsemi.com/MainEn/Main.aspx

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Revision：2.0 Jan-2019

Features



Low gate charge and RDS(ON)



Rugged and relaible

Application



Direct logic-level interface: TTL/CMOS



Drivers: relays, solenoids, lamps, hammers,

Display, memories, transistors, etc.



Battery operated systems



Solid-state relays

SOT-23

Absolute Maximum Ratings (TA=25℃unless otherwise specified)

Schematic diagram

1. Gate 2.Source 3.Drain

Marking: S3

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

50

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

0.22

A

Maximum Power Dissipation

PD

0.35

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Resistance,Junction-to-Ambient

RθJA

357

℃

/

W

Thermal Characteristics

PJM138NSA

N- Enhancement Mode Field Effect Transistor

3.Drain

2.Source

1.Gate

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类似说明 - PJM138NSA

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PJM138NSA 数据表(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

PJM138NSA 数据表(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

类似零件编号 - PJM138NSA

类似说明 - PJM138NSA

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PJM138NSA 数据表(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

PJM138NSA 数据表(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

类似零件编号 - PJM138NSA

类似说明 - PJM138NSA

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