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PJM3402NSA 数据表(PDF) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd,

部件名 PJM3402NSA
功能描述  N-Channel MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
网页  http://www.pingjingsemi.com/MainEn/Main.aspx
标志 PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3402NSA 数据表(HTML) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  PJM3402NSA Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSA Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSA Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSA Datasheet HTML 4Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSA Datasheet HTML 5Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSA Datasheet HTML 6Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSA Datasheet HTML 7Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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PJM3402NSA
N-Channel MOSFET
www.pingjingsemi.com
3 / 7
Revision：1.0 Mar-2018
Electrical Characteristics Curves
5
2
10
0
40
0
0
2
2
4
4
6
6
8
8
1
10
0
0
0
0
0..5
5
1
1
1
1..5
5
2
2
2
2..5
5
3
3
V
V
G
GS
S(
(V
Vo
olltts
s))
F
Fiig
gu
urre
e 2
2:: T
Trra
an
ns
sffe
err C
Ch
ha
arra
ac
ctte
erriis
sttiic
cs
s ((N
No
otte
e E
E))
3
30
0
4
40
0
5
50
0
6
60
0
7
70
0
8
80
0
0
0
2
2
4
4
6
6
8
8
1
10
0
II
D
D (
(A
A))
F
Fiig
gu
urre
e 3
3:: O
On
n--R
Re
es
siis
stta
an
nc
ce
e v
vs
s.. D
Drra
aiin
n C
Cu
urrrre
en
ntt a
an
nd
d G
Ga
atte
e
V
Vo
olltta
ag
ge
e ((N
No
otte
e E
E))
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0
0..8
8
1
1
1
1..2
2
1
1..4
4
1
1..6
6
1
1..8
8
0
0
2
25
5
5
50
0
7
75
5
1
10
00
0
1
12
25
5
1
15
50
0
1
17
75
5
T
Te
em
mp
pe
erra
attu
urre
e ((°°C
C))
n
n
18T
T
F
Fiig
gu
urre
e 4
4:: O
On
n--R
Re
es
siis
stta
an
nc
ce
e v
vs
s.. J
Ju
un
nc
cttiio
o
e
em
mp
pe
erra
attu
urre
e
((N
No
otte
e E
E))
V
V
G
GS
S=
=2
2..5
5V
V
II
D
D=
=2
2A
A
V
V
G
GS
S=
=4
4..5
5V
V
II
D
D=
=3
3A
A
V
V
G
GS
S=
=1
1
17
0
0V
V
II
D
D=
=4
4A
A
20
40
60
80
100
120
0
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
25
5°
°C
C
1
12
25
5°
°C
C
V
V
D
DS
S=
=5
5V
V
V
V
G
GS
S=
=4
4..5
5V
V
V
V
G
GS
S=
=1
10
0V
V
I
D=4A
25°C
125°C
0
0
3
3
6
6
9
9
1
12
2
1
15
5
0
0
1
1
2
2
3
3
4
4
5
5
V
V
D
DS
S (
(V
Vo
olltts
s))
F
Fiig
g 1
1:: O
On
n--R
Re
eg
giio
on
n C
Ch
ha
arra
ac
ctte
erriis
sttiic
cs
s ((N
No
otte
e E
E))
V
V
G
GS
S=
=2
2..0
0V
V
4
4..5
5V
V
1
10
0V
V
3
3V
V
2
2..5
5V
V
V
V
G
GS
S=
=2
2..5
5V
V



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