PJM7002NSA datasheet(2/6 Pages) PJSEMI

部件名	PJM7002NSA

功能描述	N-Enhancement Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

制造商	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

网页	http://www.pingjingsemi.com/MainEn/Main.aspx

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2 / 6 page

PJM7002NSA

N-Enhancement Field Effect Transistor

2 /

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250uA

Zero Gate Voltage Drain Current

IDSS

VDS =60 V, VGS = 0V

Gate-to-source Leakage Current

IGSS

VDS = 0 V, VGS = ±20V

±200

Gate Threshold Voltage

VGS(th)

VGS = VDS, ID = 250uA

2.5

Drain-to-source On-resistance

RDS(on)

VGS = 10V, ID = 500mA

7.5

Forward Transconductance

gFS

VDS = 10V, ID = 200mA

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz,

VDS = 25 V

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-On Delay Time

td(on)

VDD =30V, ID=200mA,

RG =25Ω, RL =150Ω,

VGS = 10V,

Turn-Off Delay Time

td(off)

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Revison：1.1 Dec-2018

Static Characteristics

Dynamic Characteristics

Switching Characteristics

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