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VR13 数据表(PDF) 2 Page - Infineon Technologies AG |
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VR13 数据表(HTML) 2 Page - Infineon Technologies AG |
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2 / 20 page ![]() Enterprise / Memory Lines PDS-PXE1-PXM1-C-001A 2 Memory Line Applications Memory Line Description DDR3/DDR4 Memory power regulation for Intel® VR13 rev1.1, VR12.5 Rev 1.5 and IMVP8 rev1.2 based systems The Infineon Technologies memory digital controllers provide intelligent power for today’s DDR3/DDR4 applications. Command and monitor functions are controlled through the Intel SVID interface which supports 5mV/step VID table, dynamic voltage identification (DVID), power states (PS), and VR Data & Configuration Register requirements. Infineon’s memory controllers utilize digital technology to implement all control functions, providing the ultimate system solution in terms of flexibility and stability. Advanced control loop features, such as Active Transient Response (ATR) modulation and fast DVID response enable optimal response to high di/dt load transients. Programmable temperature compensation to current sense allows the designer to tailor the response for best loadline accuracy over temperature. Best in class noise immunity is achieved through high oversample rate and digital current estimation. Along with inductor DCR current sensing, memory controllers also support Infineon power stages with integrated current sense and integrated temperature sense. Memory controllers support either ΔVBE or PTAT temperature sensors which provide accurate loadline performance. Protection features include a comprehensive suite of sophisticated over-voltage, under-voltage, over- temperature, and over-current protections. Memory controllers also detect and protect against an open or short circuit on the remote sensing inputs. These attributes provide a complete and advanced protection feature set for microprocessor and power systems. Memory Line Features Compliant to Intel® DC-DC converter specifications for memory applications Compliant to Intel® SVID protocol rev1.7 Output voltage regulation range 0.5V to 2.5V (10mV/step) 0.25V to 1.52V (5mV/step) Programmable to support one, two, or three fully digitally controlled voltage rails PMBus™ rev 1.2 compliant serial interface Query voltage, current, temperature faults Fault Response Supports start-up into pre-bias voltage Configurable autonomous phase add/drop Digitally programmable PID loop compensation Digital temperature compensation Input (+12V) power estimation Extensive fault detection and protection capability IUVP, IOVP, OUVP, OOVP (fixed and tracking) OCP instantaneous, averaged (total current), channel, and pulse-to-pulse current limit protection Multiple internal and external OTP thresholds Open/short voltage sense line detection Negative current limit protection Internal non-volatile memory (NVM) for custom configurations Combined state-machine and µ-controller core architecture for maximum flexibility RoHS compliant and Halogen free QFN plastic package Table 2 : Memory Controller Offerings Part Number Configuration Temp Range Package Page PXM1310CDM 3+1 phase -5C to +85C 40-lead 5mm x 5mm QFN PG-VQFN-40 10 |
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