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VR13 数据表(PDF) 2 Page - Infineon Technologies AG

部件名 VR13
功能描述  VR13 and VR12.5 Multi-rail / Multiphase Digital Controllers
PDF  20 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

VR13 数据表(HTML) 2 Page - Infineon Technologies AG

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Enterprise / Memory Lines
PDS-PXE1-PXM1-C-001A
2
Memory Line Applications
Memory Line Description
 DDR3/DDR4 Memory power regulation for Intel® VR13 rev1.1,
VR12.5 Rev 1.5 and IMVP8 rev1.2 based systems
The Infineon Technologies memory digital controllers
provide intelligent power for today’s DDR3/DDR4
applications. Command and monitor functions are
controlled through the Intel SVID interface which
supports
5mV/step
VID
table,
dynamic
voltage
identification (DVID), power states (PS), and VR Data &
Configuration Register requirements.
Infineon’s memory controllers utilize digital technology to
implement all control functions, providing the ultimate
system solution in terms of flexibility and stability.
Advanced control loop features, such as Active Transient
Response (ATR) modulation and fast DVID response
enable optimal response to high di/dt load transients.
Programmable temperature compensation to current
sense allows the designer to tailor the response for best
loadline accuracy over temperature. Best in class noise
immunity is achieved through high oversample rate and
digital current estimation. Along with inductor DCR
current sensing, memory controllers also support
Infineon power stages with integrated current sense and
integrated temperature sense. Memory controllers
support either ΔVBE or PTAT temperature sensors which
provide accurate loadline performance.
Protection features include a comprehensive suite of
sophisticated
over-voltage,
under-voltage,
over-
temperature, and over-current protections. Memory
controllers also detect and protect against an open or
short circuit on the remote sensing inputs. These
attributes provide a complete and advanced protection
feature set for microprocessor and power systems.
Memory Line Features
 Compliant to Intel® DC-DC converter specifications for memory
applications
 Compliant to Intel® SVID protocol rev1.7
 Output voltage regulation range
 0.5V to 2.5V (10mV/step)
 0.25V to 1.52V (5mV/step)
 Programmable to support one, two, or three fully digitally
controlled voltage rails
 PMBus™ rev 1.2 compliant serial interface
 Query voltage, current, temperature faults
 Fault Response
 Supports start-up into pre-bias voltage
 Configurable autonomous phase add/drop
 Digitally programmable PID loop compensation
 Digital temperature compensation
 Input (+12V) power estimation
 Extensive fault detection and protection capability
 IUVP, IOVP, OUVP, OOVP (fixed and tracking)
 OCP instantaneous, averaged (total current), channel,
and pulse-to-pulse current limit protection
 Multiple internal and external OTP thresholds
 Open/short voltage sense line detection
 Negative current limit protection
 Internal non-volatile memory (NVM) for custom
configurations
 Combined state-machine and µ-controller core architecture
for maximum flexibility
 RoHS compliant and Halogen free QFN plastic package
Table 2
: Memory Controller Offerings
Part Number
Configuration
Temp Range
Package
Page
PXM1310CDM
3+1 phase
-5C to +85C
40-lead 5mm x 5mm QFN PG-VQFN-40
10



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