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PJM20H02NSC 数据表(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

部件名 PJM20H02NSC
功能描述  N- Enhancement Mode Field Effect Transistor
PDF  6 Pages
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制造商  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
网页  http://www.pingjingsemi.com/MainEn/Main.aspx
标志 PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM20H02NSC 数据表(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  PJM20H02NSC Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM20H02NSC Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM20H02NSC Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM20H02NSC Datasheet HTML 4Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM20H02NSC Datasheet HTML 5Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM20H02NSC Datasheet HTML 6Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
200
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
1.5
A
Maximum Power Dissipation Note1
PD
1.25
W
Operating Junction and Storage Temperature Range
TJ,TSTG
150,-55 To 150
℃
Thermal Resistance,Junction-to-Ambient Note2
RθJA
100
℃
/
W
PJM20H02NSC
N- Enhancement Mode Field Effect Transistor
1 / 6
1
2
Gate
Source
3Drain
Applications
Synchronous buck converter applications
Features
VDS = 200V,ID = 1.5A
RDS(ON) < 900mΩ @ VGS=4.5V
RDS(ON) < 700mΩ @ VGS=10V
Super Low Gate Charge
Schematic diagram
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Thermal Characteristics
www.pingjingsemi.com
Revision：1.0 Jun-2019
1. Gate 2.Source 3.Drain
SOT-23-3
2
1
3


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