PJM30P30DI datasheet(1/4 Pages) PJSEMI

部件名	PJM30P30DI

功能描述	P-Channel Power MOSFET

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制造商	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

网页	http://www.pingjingsemi.com/MainEn/Main.aspx

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PJM30P30DI

P-Channel Power MOSFET

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Revision：1.0 Dec-2018

Absolute Maximum Ratings

Ratings at TC =25℃ unless otherwise specified.

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

-VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

-ID

30

A

Pulsed Drain Current Note1

-IDM

80

A

Power Dissipation

PD

35

W

Junction and Storage Temperature Range

TJ, TSTG

150, -55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ.

Units

Maximum Junction-to-Case Note2

RθJC

3.57

°C/W

⚫

RDS(ON) = 11.5mΩ @ VGS=-10V (Typ.)

⚫

High density cell design for ultra low RDS(on)

⚫

Fully characterized avalanche voltage and current

DFN3.3X3.3-8L

Schematic Diagram

Features

Applications

⚫

Power switching application

⚫

Hard switched and high frequency circuits

⚫

Uninterruptible power supply

S

G

D

3

1

2

Gate

Source

Drain

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