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PJM2302NSC 数据表(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

部件名 PJM2302NSC
功能描述  N- Enhancement Mode Field Effect Transistor
PDF  7 Pages
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制造商  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
网页  http://www.pingjingsemi.com/MainEn/Main.aspx
标志 PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM2302NSC 数据表(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  PJM2302NSC Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM2302NSC Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM2302NSC Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM2302NSC Datasheet HTML 4Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM2302NSC Datasheet HTML 5Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM2302NSC Datasheet HTML 6Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM2302NSC Datasheet HTML 7Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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PJM2302NSC
N- Enhancement Mode Field Effect Transistor
2 / 7
www.pingjingsemi.com
Revision：1.1 Dec-2018
www.pingjingsemi.com
Revision：1.1 Dec-2018
Electrical Characteristics
(TA=25℃ unless otherwise noted)
www.pingjingsemi.com
Revision：1.0 Jun-2019
Parameter
Symbol
Condition
Min Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V ID=250μA
20
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage Note3
VGS(th)
VDS=VGS,ID=250μA
0.5
0.8
1.2
V
Drain-Source On-State Resistance Note3
RDS(ON)
VGS=2.5V, ID=2.8A
-
-
55
mΩ
VGS=4.5V, ID=3A
-
-
40
mΩ
Forward Transconductance Note3
gFS
VDS=5V,ID=3A
-
8
-
S
Dynamic Characteristics
Input Capacitance
Ciss
VDS=10V,VGS=0V,
f=1.0MHz
-
300
-
pF
Output Capacitance
Coss
-
120
-
pF
Reverse Transfer Capacitance
Crss
-
80
-
pF
Switching Characteristics
Turn-on Delay Time
td(on)
VDD=10V,
ID=3A
VGS=4.5V,RGEN=6Ω
-
10
-
nS
Turn-on Rise Time
tr
-
50
-
nS
Turn-Off Delay Time
td(off)
-
17
-
nS
Turn-Off Fall Time
tf
-
10
-
nS
Total Gate Charge
Qg
VDS=10V,ID=3A,
VGS=4.5V
-
4
-
nC
Gate-Source Charge
Qgs
-
0.7
-
nC
Gate-Drain Charge
Qgd
-
1.5
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage Note 3
VSD
VGS=0V,IS=4A
-
-
1.2
V
Diode Forward Current Note 2
IS
-
-
4
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Static Characteristics
-



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