BC868 datasheet(1/3 Pages) PJSEMI

部件名	BC868

功能描述	NPN Transistor

PDF	3 Pages

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制造商	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

网页	http://www.pingjingsemi.com/MainEn/Main.aspx

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Revison：1.0 Feb-2019

Features

⚫

Low saturation voltage

⚫

Excellent current-to-gain characteristics

Absolute Maximum Ratings

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

32

V

Collector Emitter Voltage

VCEO

20

V

Emitter Base Voltage

VEBO

5

V

Collector Current

IC

1

A

Power Dissipation

PD

500

250

°C/W

Junction Temperature

TJ

150

TSTG

-55 to 150

°C

Unit

DC Current Gain

40

SOT-89

1. Base 2. Collector 3.Emitter

Marking: -10: 5J

-16:5K

-25:5L

Storage Temperature Range

Maximum Junction-to-Ambient

RθJA

°C

mW

BC868

NPN Transistor

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