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AS7C252MPFD18A 数据表(PDF) 1 Page - Alliance Semiconductor Corporation

部件名 AS7C252MPFD18A
功能描述  2.5V 2M x 18 pipelined burst synchronous SRAM
PDF  18 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS7C252MPFD18A 数据表(HTML) 1 Page - Alliance Semiconductor Corporation

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February 2005
Copyright © Alliance Semiconductor. All rights reserved.
®
AS7C252MPFD18A
2/11/05, v.1.1
Alliance Semiconductor
1 of 18
2.5V 2M
× 18 pipelined burst synchronous SRAM
Features
• Organization: 2,097,152 words × 18 bits
• Fast clock speeds to 200 MHz
• Fast clock to data access: 3.1/3.5/3.8 ns
•Fast OE access time: 3.1/3.5/3.8 ns
• Fully synchronous register-to-register operation
• Double-cycle deselect
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Individual byte write and global write
• Multiple chip enables for easy expansion
• 2.5V core power supply
• Linear or interleaved burst control
• Snooze mode for reduced power-standby
• Common data inputs and data outputs
Logic block diagram
Selection guide
-200
-166
-133
Units
Minimum cycle time
5
6
7.5
ns
Maximum clock frequency
200
166
133
MHz
Maximum pipelined clock access time
3.1
3.5
3.8
ns
Maximum operating current
450
400
350
mA
Maximum standby current
170
150
140
mA
Maximum CMOS standby current (DC)
90
90
90
mA
Burst logic
ADV
ADSC
ADSP
CLK
LBO
CLK
CLR
CS
21
19
21
A[20:0]
21
Address
D
Q
CS
CLK
register
2M x 18
Memory
array
18
18
DQb
CLK
DQ
Byte Write
registers
DQa
CLK
DQ
Byte Write
registers
Enable
CLK
DQ
register
Enable
CLK
DQ
delay
register
CE
Output
registers
Input
registers
Power
down
DQ[a,b]
2
CE0
CE1
CE2
BWb
BWa
OE
ZZ
OE
CLK
CLK
BWE
GWE
18


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