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AS7C331MNTD32A 数据表(PDF) 5 Page - Alliance Semiconductor Corporation |
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AS7C331MNTD32A 数据表(HTML) 5 Page - Alliance Semiconductor Corporation |
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5 / 18 page ![]() ® 12/23/04, V 1.6 Alliance Semiconductor P. 5 of 18 AS7C331MNTD32A AS7C331MNTD36A Signal descriptions Snooze Mode SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of SNOOZE MODE is dictated by the length of time the ZZ is in a High state. The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE. When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. After entering SNOOZE MODE, all inputs except ZZ is disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete. Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE. Signal I/O Properties Description CLK I CLOCK Clock. All inputs except OE, LBO, and ZZ are synchronous to this clock. CEN I SYNC Clock enable. When de-asserted high, the clock input signal is masked. A, A0, A1 I SYNC Address. Sampled when all chip enables are active and ADV/LD is asserted. DQ[a,b,c,d] I/O SYNC Data. Driven as output when the chip is enabled and OE is active. CE0, CE1, CE2 I SYNC Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted. Are ignored when ADV/LD is high. ADV/LD I SYNC Advance or Load. When sampled high, the internal burst address counter will increment in the order defined by the LBO input value. When low, a new address is loaded. R/W I SYNC A high during LOAD initiates a READ operation. A low during LOAD initiates a WRITE operation. Is ignored when ADV/LD is high. BW[a,b,c,d] I SYNC Byte write enables. Used to control write on individual bytes. Sampled along with WRITE command and BURST WRITE. OE I ASYNC Asynchronous output enable. I/O pins are not driven when OE is inactive. LBO ISTATIC Selects Burst mode. When tied to VDD or left floating, device follows interleaved Burst order. When driven Low, device follows linear Burst order. This signal is internally pulled High. ZZ I ASYNC Snooze. Places device in low power mode; data is retained. Connect to GND if unused. NC - - No connect |
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