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SS12F-PJ 数据表(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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SS12F-PJ 数据表(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page ![]() SS12F- PJ thru SS120F-PJ SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Forward Current-1A Reverse Voltage-20V to 200V Case: SMAF molded plastic body Terminals: Solderable per MIL-STD-750 , Method 2026 Weight: Approximated 0.027 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derating by 20 %. PARAMETER SYMBOL SS12F - PJ SS14F - PJ SS16F - PJ SS18F - PJ SS110F - PJ SS112F - PJ SS115F - PJ SS120F - PJ UNIT Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS Voltage VRMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current at TC=125℃ IF(AV) 1.0 A Peak Forward Surge Current (Note1) IFSM 30 A Maximum Forward Voltage at 1.0 A VF 0.55 0.70 0.85 0.90 V Maximum DC Reverse Current at Rated DC Blocking Voltage at TA=25℃ TA=100℃ IR 0.3 10 0.2 5 0.1 2 mA Typical Junction Capacitance (Note2) CJ 110 80 pF Typical Thermal Resistance(Note3) RθJA 95 ℃ /W Storage Temperature Range TJ -55 to +150 ℃ Notes: 1. Measured at 8.3 ms single half sine wave superimposed on rated load (JEDEC Method). 2. Measured at 1MHz and applied reverse voltage of 4 V D.C. 3. P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. FEATURES For surface mount applications High forward surge current capability Low power loss,high efficiency Metal silicon junction,majority carriers conduction MECHANICAL DATA PIN DESCRIPTION 1 Cathode 2 Anode 1 2 PIN NING TSTG Operating Junction Temperature Range -55 to +125 ℃ Top View Marking Code: SS12 — SS120 Simplified outline SMAF and symbol 1 / 3 www.pingjingsemi.com Revision:1.0 Oct-2017 |
类似零件编号 - SS12F-PJ |
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类似说明 - SS12F-PJ |
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