数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

F8NE65 数据表(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

部件名 F8NE65
功能描述  7.5A 650V N-channel Enhancement Mode Power MOSFET
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]
网页  http://www.jswxdh.cn
标志 WXDH - Jiangsu Donghai Semiconductor Technology Co.,Ltd

F8NE65 数据表(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

  F8NE65 Datasheet HTML 1Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd F8NE65 Datasheet HTML 2Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd F8NE65 Datasheet HTML 3Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd F8NE65 Datasheet HTML 4Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd F8NE65 Datasheet HTML 5Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd F8NE65 Datasheet HTML 6Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd F8NE65 Datasheet HTML 7Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd F8NE65 Datasheet HTML 8Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd F8NE65 Datasheet HTML 9Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 11 page
background image
ROUM Semiconductor Technology CO.,LTD.
Rev. 1.0
www.roum.cn
Page 2 of 11
8NE65
4.3 Electrical Characteristics (Tc=25℃,unless otherwise noted)
PARAMETER
SYMBOL
Test Condition
VALUE
UNIT
MIN
TYP
MAX
Off Characteristics
Drain-source Breakdown
Voltage
BVDSS
ID=250μA,VGS=0V
650
--
--
V
Drain-to-Source Leakage
Current
IDSS
VDS=650V,VGS=0V,TC=25℃
--
--
1
μA
VDS=520V,VGS=0V,TC=125℃
--
--
100
μA
Gate-to-Source
Forward
Leakage
IGSSF
VGS=+30V
--
--
100
nA
Gate-to-Source
Reverse
Leakage
IGSSR
VGS=-30V
--
--
-100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
--
4
V
Drain-source on
Resistance
RDS(on)
VGS=10V,ID=3.75A
--
1.2
1.4
Ω
Dynamic Characteristics
(Note 4)
Forward Transfer
Conductance
gfs
VDS=15V,ID=3.75A
--
6.5
--
S
Input Capacitance
Ciss
VGS=0V,VDS=25V,f=1.0MHz
--
1130
--
pF
Output Capacitance
Coss
--
93
--
Reverse Transfer
Capacitance
Crss
--
5.5
--
Switching Characteristics
(note4)
Turn-on Delay Time
td(on)
ID=7A,
VDD=325V,
RG=10Ω
--
19
--
nS
Turn-on Rise Time
tr
--
21
--
nS
Turn-off Delay Time
td(off)
--
42
--
nS
Turn-off Fall Time
tf
--
19
--
nS
Total Gate Charge
Qg
ID=7A,VDD=520V,VGS=10V
--
24
--
nC
Gate-to-Source Charge
Qgs
--
5.1
--
Gate-to-Drain(“Miller”)C
harge
Qgd
--
9.5
--
Drain-Source Diode Characteristics
Diode Forward Voltage
(N
ote 3)
VFSD
VGS=0V,IS=7.5A
--
--
1.5
V
Diode Forward Current
(N
ote 2)
IS
--
--
7.5
A
Reverse Recovery Time
trr
TJ=25℃,IF=7A,
dIF/dt=100A/μS,VGS=0V
--
382
--
nS
Reverse Recovery
Charge
Qrr
--
1980
--
nC
Reverse Recovery
Current
IRRM
--
10.2
--
A
Notes：
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=8.4A,VDD=50V,VGATE=650V,Start TJ=25℃.
6. ISD=7.5A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃.



Html Pages

1 2 3 4 5 6 7 8 9 10 11


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com