MBRF2045CT datasheet(2/7 Pages) WXDH

部件名	MBRF2045CT

功能描述	Low VF Schottky Barrier series Rectifiers Voltage 45 Volts

PDF	7 Pages

Scroll/Zoom	100%

制造商	WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]

网页	http://www.jswxdh.cn

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2 / 7 page

ROUM Semiconductor Technology CO.,LTD.

Rev. 1.0

www.roum.cn

Page 2 of 7

MBRF2045CT

Operating Junction Temperature Range

150

℃

Typical Junction Capacitance

310

Storage Temperature Range

Tstg

-40～150

℃

4.2 Thermal Characteristics

Parameter

Symbol

Value

Unit

Thermal Resistance

Junction to Case-sink

TO-220C

RthJC

2.4

℃/W

TO-220F

4.5

TO-251/252

4.2

4.3 Electrical Characteristics(Tamb=25℃,unless otherwise noted)

Parameter

Symbol

Test Condition

Value

Units

Min

Typ

Max

Breakdown Voltage

VBR

IR=1mA

100

Forward Voltage Drop

IF=10A, TJ=25℃

0.85

IF=10A, TJ=125℃

0.70

IF=20A, TJ=25℃

0.95

IF=20A, TJ=125℃

0.80

Reverse Leakage Current

VR=100V, TJ=125℃

VR=100V, TJ=25℃

0.05

Pulse test, pulse width tp = 300μs, duty cycle δ ≤ 2%

Notes：

1: Repetitive rating, pulse width limited by maximum junction temperature.

2: Surface mounted on FR4 Board, t≤10sec.

3: 2.0 us Pulse Width, f=1.0 KHz

4: Guaranteed by design, not subject to production.

5. Pulse Test: 300us Pulse Width, 1% Duty Cycle

6. ISD=2A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃.

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