数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

AS7C331MPFS32A 数据表(PDF) 4 Page - Alliance Semiconductor Corporation

部件名 AS7C331MPFS32A
功能描述  3.3V 1M x 32/36 pipelined burst synchronous SRAM
PDF  19 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS7C331MPFS32A 数据表(HTML) 4 Page - Alliance Semiconductor Corporation

  AS7C331MPFS32A Datasheet HTML 1Page - Alliance Semiconductor Corporation AS7C331MPFS32A Datasheet HTML 2Page - Alliance Semiconductor Corporation AS7C331MPFS32A Datasheet HTML 3Page - Alliance Semiconductor Corporation AS7C331MPFS32A Datasheet HTML 4Page - Alliance Semiconductor Corporation AS7C331MPFS32A Datasheet HTML 5Page - Alliance Semiconductor Corporation AS7C331MPFS32A Datasheet HTML 6Page - Alliance Semiconductor Corporation AS7C331MPFS32A Datasheet HTML 7Page - Alliance Semiconductor Corporation AS7C331MPFS32A Datasheet HTML 8Page - Alliance Semiconductor Corporation AS7C331MPFS32A Datasheet HTML 9Page - Alliance Semiconductor Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 19 page
background image
®
AS7C331MPFS32A
AS7C331MPFS36A
12/23/04, v.2.9
Alliance Semiconductor
4 of 19
Functional description
The AS7C331MPFS32A/36A is a high-performance CMOS 32-Mbit Synchronous Static Random Access Memory (SRAM)
device organized as 1,048,576 words x 32/36. It incorporates a two-stage register-register pipeline for highest frequency on any
given technology.
Fast cycle times of 5/6/7.5 ns with clock access times (tCD) of 3.1/3.5/3.8 ns enable 200,166and 133MHz bus frequencies.
Three chip enable (CE) inputs permit easy memory expansion. Burst operation is initiated in one of two ways: the controller
address strobe (ADSC), or the processor address strobe (ADSP). The burst advance pin (ADV) allows subsequent internally
generated burst addresses.
Read cycles are initiated with ADSP (regardless of WE and ADSC) using the new external address clocked into the on-chip
address register when ADSP is sampled low, the chip enables are sampled active, and the output buffer is enabled with OE. In
a read operation, the data accessed by the current address registered in the address registers by the positive edge of CLK are
carried to the data-out registers and driven on the output pins on the next positive edge of CLK. ADV is ignored on the clock
edge that samples ADSP asserted, but is sampled on all subsequent clock edges. Address is incremented internally for the next
access of the burst when ADV is sampled low and both address strobes are high. Burst mode is selectable with the LBO input.
With LBO unconnected or driven high, burst operations use an interleaved count sequence. With LBO driven low, the device
uses a linear count sequence.
Write cycles are performed by disabling the output buffers with OE and asserting a write command. A global write enable
GWE writes all 32/36 bits regardless of the state of individual BW[a:d] inputs. Alternately, when GWE is high, one or more
bytes may be written by asserting BWE and the appropriate individual byte BWn signals.
BWn is ignored on the clock edge that samples ADSP low, but it is sampled on all subsequent clock edges. Output buffers are
disabled when BWn is sampled LOW regardless of OE. Data is clocked into the data input register when BWn is sampled low.
Address is incremented internally to the next burst address if BWn and ADV are sampled low. This device operates in single-
cycle deselect feature during read cycles.
Read or write cycles may also be initiated with ADSC instead of ADSP. The differences between cycles initiated with ADSC
and ADSP follow.
ADSP must be sampled high when ADSC is sampled low to initiate a cycle with ADSC.
WE signals are sampled on the clock edge that samples ADSC low (and ADSP high).
Master chip enable CE0 blocks ADSP, but not ADSC.
The AS7C331MPFS32A/36A family operates from a core 3.3V power supply. I/Os use a separate power supply that can
operate at 2.5V or 3.3V. These devices are available in a 100-pin TQFP package.
TQFP capacitance
* Guaranteed not tested
TQFP thermal resistance
Parameter
Symbol
Test conditions
Min
Max
Unit
Input capacitance
CIN*
VIN = 0V
-
5
pF
I/O capacitance
CI/O*
VOUT = 0V
-
7
pF
Description
Conditions
Symbol
Typical
Units
Thermal resistance
(junction to ambient)1
1 This parameter is sampled
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51
1–layer
θJA
40
°C/W
4–layer
θJA
22
°C/W
Thermal resistance
(junction to top of case)1
θJC
8
°C/W



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com