TS912AID datasheet(5/21 Pages) STMICROELECTRONICS

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TS912, TS912A, TS912B

Electrical characteristics

Doc ID 2325 Rev 7

5/21

Electrical characteristics

Table 3.

VCC+ = 3 V, VCC- = 0 V, RL, CL connected to VCC/2, Tamb = 25 °C

(unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

Vio

Input offset voltage (Vic = Vo = VCC/2)

TS912

TS912A

TS912B

Tmin ≤ Tamb ≤ Tmax

TS912

TS912A

TS912B

ΔVio

Input offset voltage drift

μV/°C

Iio

Input offset current(1)

Tmin ≤ Tamb ≤ Tmax

100

200

Iib

Input bias current(1)

Tmin ≤ Tamb ≤ Tmax

150

300

ICC

Supply current (per amplifier, AVCL = 1, no load)

Tmin ≤ Tamb ≤ Tmax

200

300

400

μA

CMR

Common mode rejection ratio

Vic = 0 to 3 V, Vo = 1.5 V

SVR

Supply voltage rejection ratio (VCC

+ = 2.7 to 3.3 V, V

o = VCC/2)

Avd

Large signal voltage gain (RL = 10 kΩ, Vo = 1.2 V to 1.8 V)

Tmin ≤ Tamb ≤ Tmax

V/mV

VOH

High level output voltage (Vid = 1 V)

RL = 100 kΩ

RL = 10 kΩ

RL = 600 Ω

RL = 100 Ω

Tmin ≤ Tamb ≤ Tmax

RL = 10 kΩ

RL = 600 Ω

2.95

2.9

2.3

2.8

2.1

2.96

2.6

VOL

Low level output voltage (Vid = -1 V)

RL = 100 kΩ

RL = 10 kΩ

RL = 600 Ω

RL = 100 Ω

Tmin ≤ Tamb ≤ Tmax

RL = 10 kΩ

RL = 600 Ω

300

900

400

100

600

Output short-circuit current (Vid = ±1 V)

Source (Vo = VCC-)

Sink (Vo = VCC+)

GBP

Gain bandwidth product

(AVCL = 100, RL = 10 kΩ, CL = 100 pF, f = 100 kHz)

0.8

MHz

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