IS25LP064A-RFLA2 datasheet(43/99 Pages) ISSI

部件名	IS25LP064A-RFLA2

功能描述	3V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE

PDF	99 Pages

Scroll/Zoom	100%

制造商	ISSI [Integrated Silicon Solution, Inc]

网页	http://www.issi.com

标志

43 / 99 page

IS25LP064A/032A

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A

11/06/2015

8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h)

A Block Erase (BER) instruction erases a 32/64 Kbyte block. Before the execution of a BER instruction, the

Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically

after the completion of a block erase operation.

The BER instruction code and three address bytes are input via SI. Erase operation will start immediately after

the CE# is pulled high, otherwise the BER instruction will not be executed. The internal control logic

automatically handles the erase voltage and timing.

Figure 8.16 Block Erase (64K) Sequence

Instruction = D8h

CE #

SCK

3-byte Address

High Impedance

...

Mode 3

Mode 0

Figure 8.17 Block Erase (64K) QPI Sequence

D8h

CE#

SCK

IO[3:0]

3-byte Address

Mode 3

Mode 0

23:20 19:16 15:12 11:8

7:4

3:0

IS25LP064A-RFLA2 数据表(PDF) 43 Page - Integrated Silicon Solution, Inc