数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

WSF60P03 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件名 WSF60P03
功能描述  P-Ch MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF60P03 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF60P03 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60P03 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60P03 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60P03 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60P03 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
---
---
237
---
---
310
---
---
2215
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.0232
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V , ID=-30A
---
12
15
m
Ω
VGS=-4.5V , ID=-15A
---
20
25
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.0
-1.5
-2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
4.6
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-24V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±25V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-30A
---
30
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
9
18
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-15A
---
22
30.8
nC
Qgs
Gate-Source Charge
---
8.7
12.2
Qgd
Gate-Drain Charge
---
7.2
10
Td(on)
Turn-On Delay Time
VDD=-15V , VGS=-10V , RG=3.3Ω
ID=-15A
---
8
16
ns
Tr
Rise Time
---
73.7
132
Td(off)
Turn-Off Delay Time
---
61.8
123
Tf
Fall Time
---
24.4
48
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=-25V , L=0.1mH , IAS=-24A
63
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
-
60
A
ISM
Pulsed Source Current
2,6
---
---
-1
40
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
IF=-15A
,dI/dt=100A/µs, T
J=25℃
---
19
---
nS
Qrr
Reverse Recovery Charge
---
9
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-
24A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSF60P03
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014



Html Pages

1 2 3 4 5


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com