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WSF60P15 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件名 WSF60P15
功能描述  P-Ch MOSFET
PDF  5 Pages
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制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF60P15 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF60P15 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60P15 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60P15 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60P15 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60P15 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.03
---
V/℃
VGS=-10V , ID=-12A
---
50
60
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-8A
---
75
90
m
Ω
VGS(th)
Gate Threshold Voltage
-1.2
-2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
---
4.56
---
mV/℃
VDS=-48V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=-48V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-9A
---
15.3
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13.5
27
Ω
Qg
Total Gate Charge (-4.5V)
---
9.86
---
Qgs
Gate-Source Charge
---
3.08
---
Qgd
Gate-Drain Charge
VDS=-48V , VGS=-4.5V , ID=-10A
---
2.95
---
nC
Td(on)
Turn-On Delay Time
---
9.6
---
Tr
Rise Time
---
18
---
Td(off)
Turn-Off Delay Time
---
45.8
---
Tf
Fall Time
VDD=-30V , VGS=-10V , RG=3.3Ω,
ID=-10A
---
45.8
---
ns
Ciss
Input Capacitance
---
1447
---
Coss
Output Capacitance
---
97.3
---
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
70
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=-25V , L=0.1mH , IAS=-20A
29
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
-
6
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
-30
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
Note :
1.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-20A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
WSF60P15
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec .



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