AS29F200 datasheet(1/20 Pages) ALSC

部件名	AS29F200

功能描述	5V 256K x 8/128K x 8 CMOS FLASH EEPROM

PDF	20 Pages

Scroll/Zoom	100%

制造商	ALSC [Alliance Semiconductor Corporation]

网页	https://www.alliancememory.com

标志

1 / 20 page

3UHOLPLQDU\#LQIRUPDWLRQ

®

$65<)533

','#4407333<0$1#72:233

$//,$1&(#6(0,&21'8&725

4444

89#589.ð;245;.ð49#&026#)ODVK#((3520

)HDWXUHV

• Organization: 256K×8 or 128K×16

• Sector architecture

- One 16K; two 8K; one 32K; and three 64K byte sectors

- Boot code sector architecture—T (top) or B (bottom)

- Erase any combination of sectors or full chip

• Single 5.0±0.5V power supply for read/write operations

• Sector protection

• High speed 55/70/90/120 ns address access time

• Automated on-chip programming algorithm

- Automatically programs/verifies data at specified ad-

dress

• Automated on-chip erase algorith

- Automatically preprograms/erases chip or specified sec-

tors

• 10,000 write/erase cycle endurance

• Hardware RESET pin

- Resets internal state machine to read mode

• Low power consumption

- 20 mA typical read current

- 30 mA typical program current

- 300 µA typical standby current

- 1 µA typical standby current (RESET = 0)

• JEDEC standard software, packages and pinouts

-48-pin TSOP

-44-pin SO

• Detection of program/erase cycle completion

-DQ7 DATA polling

- DQ6 toggle bit

- RY/BY output

• Erase suspend/resume

- Supports reading data from a sector not being erased

• Low VCC write lock-out below 2.8V

/RJLF#EORFN#GLDJUDP

X decoder

VCC

VSS

Cell matrix

Y decoder

Y gating

Data latch

Chip enable

Input/output

buffers

Sector protect

Command

register

Program/erase

control

VCC detector

Erase voltage

generator

Program voltage

generator

Timer

A0–A16

CE

OE

STB

Output enable

Logic

RY/BY

WE

BYTE

RESET

DQ0–DQ15

switches

A-1

3LQ#DUUDQJHPHQW

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

A14

A15

A16

BYTE

VSS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

A6

A5

A4

A3

A2

A1

A0

CE

VSS

OE

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

44-pin SO

21

22

DQ3

DQ11

A10

A11

A12

A13

2

RY/BY

3

NC

4

A7

1

NC

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

43

42

41

44

WE

A8

A9

RESET

48-pin TSOP

AS29F200

6HOHFWLRQ#JXLGH

29F200-55

29F200-70

29F200-90

29F200-120 Unit

Maximum access time

tAA

55

70

90

120

ns

Maximum chip enable access time

tCE

55

70

90

120

ns

Maximum output enable access time

tOE

25

30

35

50

ns

类似零件编号 - AS29F200

制造商	部件名	数据表	功能描述
Alliance Semiconductor ...	AS29F010	175Kb / 10P	5V 128K x 8 CMOS FLASH EEPROM
Austin Semiconductor	AS29F010	530Kb / 26P	128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
Micross Components	AS29F010	871Kb / 26P	Flexible sector architecture
Alliance Semiconductor ...	AS29F010-120LC	175Kb / 10P	5V 128K x 8 CMOS FLASH EEPROM
Alliance Semiconductor ...	AS29F010-120PC	175Kb / 10P	5V 128K x 8 CMOS FLASH EEPROM

More results

类似说明 - AS29F200

制造商	部件名	数据表	功能描述
Winbond	W29C011A	153Kb / 19P	128K X 8 CMOS FLASH MEMORY
	W29EE011	183Kb / 20P	128K X 8 CMOS FLASH MEMORY
	W49F020	190Kb / 21P	256K X 8 CMOS FLASH MEMORY
Macronix International	MX28F2100B	283Kb / 45P	2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
Winbond	W29EE012	242Kb / 19P	128K X 8 CMOS FLASH MEMORY
Alliance Semiconductor ...	AS7C1024B	111Kb / 9P	5V 128K X 8 CMOS SRAM
	AS29F010	175Kb / 10P	5V 128K x 8 CMOS FLASH EEPROM
	AS29F040	341Kb / 18P	5V 512K x 8 CMOS FLASH EEPROM
	AS7C1024C	113Kb / 9P	5V 128K X 8 CMOS SRAM
Force Technologies Ltd	FT28C010-XXXXX-X	2Mb / 30P	128K x 8 Bit 5V EEPROM