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WSF4012 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件名 WSF4012
功能描述  N-Ch and P-Channel MOSFET
PDF  7 Pages
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制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF4012 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF4012 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4012 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4012 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4012 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4012 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4012 Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4012 Datasheet HTML 7Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.034
---
V/℃
VGS=10V , ID=12A
---
16
2
1
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V , ID=10A
---
18
25
m
Ω
VGS(th)
Gate Threshold Voltage
1.
5
2.0
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-4.56
---
mV/℃
VDS=32V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=32V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=12A
---
8
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.6
5.2
Ω
Qg
Total Gate Charge (4.5V)
---
5.5
---
Qgs
Gate-Source Charge
---
1.25
---
Qgd
Gate-Drain Charge
VDS=20V , VGS=4.5V , ID=12A
---
2.5
---
nC
Td(on)
Turn-On Delay Time
---
9.2
---
Tr
Rise Time
---
2.5
---
Td(off)
Turn-Off Delay Time
---
42
---
Tf
Fall Time
VDD=20V , VGS=10V , RG=3.3Ω
ID=1A
---
3.0
---
ns
Ciss
Input Capacitance
---
1150
---
Coss
Output Capacitance
---
210
---
Crss
Reverse Transfer Capacitance
VDS=15V , VGS=0V , f=1MHz
---
98
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=10A
15
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
23
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
46
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
WSF4012
N-Ch and P-Channel MOSFET
Page 2
www.winsok.tw
Dec.2014



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