数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

WSF30160 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件名 WSF30160
功能描述  N-Ch MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF30160 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF30160 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF30160 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF30160 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF30160 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF30160 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.022
---
V/℃
VGS=10V , ID=20A
2.3
3.0
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V , ID=15A
4.6
mΩ
VGS(th)
Gate Threshold Voltage
1.5
1.9
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-6.1
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
2
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=55℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forwar Trd ansconductance
VDS=5V , ID=30A
---
50
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
0.9
1.8
Ω
Qg
Total Gate Charge (4.5V)
---
40.3
---
Qgs
Gate-Source Charge
---
5
---
Qgd
Gate-Drain Charge
VDS=15V , VGS=10V , ID=30A
---
10.5
---
nC
Td(on)
Turn-On Delay Time
---
18
---
Tr
Rise Time Rise Time
---
14
---
Td(off)
Turn-Off Delay Time
---
46
---
Tf
Turn-Off Fall Time
VDD=15V , VGEN=10V , RG=6Ω,
ID=1A, RL=15Ω.
---
19
---
ns
Ciss
Input Capacitance
---
2450
---
Coss
Output Capacitance
---
590
---
Crss
Reverse Transfer Capacitance
VDS=15V , VGS=0V , f=1MHz
---
245
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
VDD=25V , L=0.1mH , IAS=20A
85
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,6
---
50
A
ISM
---
---
330
A
VSD
Diode Forward Voltage2
VGS=0V , IS=A , TJ=25℃
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.Package limitation current is 100A.
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (TJ=25
°C, unless otherwise noted)
Page 2
www.winsok.tw
Dec.2014
---
---
Pulsed Source Current2,6
---
VG=VD=0V , Force Current
WSF30160
N-Ch MOSFET
3.8
---



Html Pages

1 2 3 4 5


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com