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ASM3P2185B 数据表(PDF) 3 Page - Alliance Semiconductor Corporation |
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ASM3P2185B 数据表(HTML) 3 Page - Alliance Semiconductor Corporation |
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3 / 7 page ![]() September 2003 ASM3P2185B rev 1.0 EMI Reduction IC 3 of 7 Notice: The information in this document is subject to change without notice. Absolute Maximum Ratings Symbol Parameter Rating Unit VDD, VIN Voltage on any pin with respect to GND -0.5 to + 7.0 V TSTG Storage temperature -65 to +125 °C TA Operating temperature 0 to 70 °C Note: These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. DC Electrical Characteristics Symbol Parameter Min Typ Max Unit VIL Input low voltage GND – 0.3 - 0.8 V VIH Input high voltage 2.0 - VDD + 0.3 V IIL Input low current - - -35 µA IIH Input high current - - 35 µA IXOL XOUT Output low current (@ 0.4V, VDD = 3.3V) - TBD - mA IXOH XOUT Output high current (@ 2.5V, VDD = 3.3V) - TBD - mA VOL Output low voltage (VDD = 3.3V, IOL = 20mA) - - 0.4 V VOH Output high voltage (VDD = 3.3V, IOH = 20mA) 2.5 - - V ICC Dynamic supply current Normal mode (3.3V and 10pF loading) 8.46 12 17.78 mA IDD Static supply current Standby mode 0.6 mA VDD Operating voltage 2.7 3.3 3.7 V tON Power up time (first locked clock cycle after power up) - 0.18 - mS ZOUT Clock out impedance - 50 - Ω |
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