WSP4606 datasheet(1/8 Pages) WIINSOK

部件名	WSP4606

功能描述	N-Ch and P-Channel MOSFET

PDF	8 Pages

Scroll/Zoom	100%

制造商	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

网页	http://www.winsok.tw/index.html

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1 / 8 page

Rating

Symbol

Parameter

N-Channel P-Channel

Units

VDS

Drain-Source Voltage

30

-30

V

VGS

Gate-Sou

rce Voltage

±

20

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V

1

7.0

-6

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V

1

6

-4

A

IDM

Pulsed Drain Current

2

20

-12

A

EAS

Single Pulse Avalanche Energy

3

72

59

mJ

IAS

Avalanche Current

21

-19

A

PD@TC=25℃

Total Power Dissipation

4

2.5

2.08

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-Ambient

1

---

85

℃

/W

RθJC

Thermal Resistance Junction-Case

1

---

50

℃

/W

BVDSS

RDSON

ID

30V

18mΩ

7A

-30V

30mΩ

-6A

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

General Description

Features

Applications

Power management in half bridge and inverters

DC-DC Converter

Load Switch

Absolute Maximum Ratings

Thermal Data

Product Summery

SOP-8 Pin Configuration

The WSP4606 is the highest performance trench

N-ch and P-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and

gate charge for most of the synchronous buck

converter applications .

The WSP4606 meet the RoHS and Green

Product requirement , 100% EAS guaranteed

with full function reliability approved.

WSP4606

N-Ch and P-Channel MOSFET

Page 1

www.winsok.tw

Dec.2014

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