WSP4882 datasheet(1/5 Pages) WIINSOK

部件名	WSP4882

功能描述	Dual N-Channel MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

网页	http://www.winsok.tw/index.html

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1 / 5 page

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Sou

rce Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V

1

8.0

A

ID@TC=70℃

Continuous Drain Current, VGS @ 10V

1

7.0

A

IDM

Pulsed Drain Current

2

40

A

EAS

Single Pulse Avalanche Energy

3

20

mJ

IAS

Avalanche Current

9

A

PD@TA=25℃

Total Power Dissipation

4

2.0

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-ambient

1

---

90

℃

/W

RθJC

Thermal Resistance Junction-Case

1

---

50

℃

/W

BVDSS

RDSON

ID

30V

20mΩ

8.0A

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

General Description

Features

Applicatio

High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

Networking DC-DC Power System

Load Switch

Absolute Maximum Ratings

Thermal Data

SOP

-8 Pin Configuration

Product Summery

Page 1

www.winsok.tw

Dec.2014

WSP4882

Dual N-Channel MOSFET

The WSP4882 is the highest performance

trench N-ch MOSFET with extreme high cell

density,which provide excellent RDSON and

gate chargens for most of the synchronous

buck converter applications .

The WSP4882 meet the RoHS and Green

Product requirement,100% EAS

guaranteed with full function reliability

approved.

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