FDMS3602S datasheet(1/15 Pages) ONSEMI

部件名	FDMS3602S

功能描述	PowerTrench짰 Power Stage 25 V Asymmetric Dual N-Channel MOSFET

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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Publication Order

Number: FDMS3602S/D

Semiconductor Components Industries, LLC.

August-2017, Rev. 2

FDMS3602S

PowerTrench® Power Stage

25 V Asymmetric Dual N-Channel MOSFET

Features

Q1: N-Channel

Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A

Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A

Q2: N-Channel

Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A

Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A

Low inductance packaging shortens rise/fall times, resulting in

lower switching losses

MOSFET integration enables optimum layout for lower circuit

inductance and reduced switch node ringing

RoHS Compliant

General Description

This device includes two specialized N-Channel MOSFETs in a

dual PQFN package. The switch node has been internally

connected to enable easy placement and routing of synchronous

buck converters. The control MOSFET (Q1) and synchronous

SyncFETTM (Q2) have been designed to provide optimal power

efficiency.

Applications

Computing

Communications

General Purpose Point of Load

Notebook VCORE

Server

4

3

2

1

5

6

7

8

Q1

Q2

G1

D1

G2

S2

D1

PHASE

(S1/D2)

S2

G2

D1

G1

Top

Bottom

PHASE

Pin 1

MOSFET Maximum Ratings T

A = 25°C unless otherwise noted.

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Q1

Q2

Units

VDS

Drain to Source Voltage

25

V

VGS

Gate to Source Voltage

(Note 3)

±20

V

ID

Drain Current

-Continuous (Package limited)

TC = 25 °C

30

40

A

-Continuous (Silicon limited)

TC = 25 °C

65

135

-Continuous

TA = 25 °C

151a

261b

-Pulsed

40

100

EAS

Single Pulse Avalanche Energy

504

1445

mJ

PD

Power Dissipation for Single Operation

TA = 25°C

2.21a

2.51b

W

Power Dissipation for Single Operation

TA = 25°C

1.01c

1.01d

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJA

Thermal Resistance, Junction to Ambient

571a

501b

°C/W

RθJA

Thermal Resistance, Junction to Ambient

1251c

1201d

RθJC

Thermal Resistance, Junction to Case

3.5

2

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

22OA

N7OC

FDMS3602S

Power 56

13”

12 mm

3000 units

类似零件编号 - FDMS3602S

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FDMS3602S	582Kb / 15P	25 V Asymmetric Dual N-Channel MOSFET Features

More results

类似说明 - FDMS3602S

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FDMS3600S	593Kb / 15P	PowerTrench짰 Power Stage 25 V Asymmetric Dual N-Channel MOSFET
	FDMS3622S	403Kb / 12P	PowerTrench짰 Power Stage 25V Asymmetric Dual N-Channel MOSFET
	FDMS3624S	395Kb / 12P	PowerTrench짰 Power Stage 25V Asymmetric Dual N-Channel MOSFET
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	FDMS3668S	572Kb / 15P	PowerTrench짰 Power Stage Asymmetric Dual N-Channel MOSFET
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	FDMS3604AS	589Kb / 15P	PowerTrench짰 Power Stage 30 V Asymmetric Dual N-Channel MOSFET
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More results

FDMS3602S 数据表(PDF) 1 Page - ON Semiconductor

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类似零件编号 - FDMS3602S

类似说明 - FDMS3602S

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类似零件编号 - FDMS3602S

类似说明 - FDMS3602S

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