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WSP4886 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件名 WSP4886
功能描述  Dual N-Channel MOSFET
PDF  5 Pages
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制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP4886 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSP4886 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4886 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4886 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4886 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4886 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.034
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
8.8A
---
18
24
m
Ω
VGS=4.5V , ID=
5A
---
24
28
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.5
0.7
1.2
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.8
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=24V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
8.8A
---
6
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
2.5
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=
8.8A
---
6
8.4
nC
Qgs
Gate-Source Charge
---
1.5
---
Qgd
Gate-Drain Charge
---
2.5
---
Td(on)
Turn-On Delay Time
VDD=15V , VGEN=10V , RG=6Ω
ID=
1A,RL=15Ω
---
6
8.8
ns
Tr
Rise Time
---
8.2
14
Td(off)
Turn-Off Delay Time
---
16
24
Tf
Fall Time
---
4
8
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
580
pF
Coss
Output Capacitance
---
95
Crss
Reverse Transfer Capacitance
---
57
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.
5mH , IAS=9A
18
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
2
A
ISM
Pulsed Source Current
2,6
---
---
40
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.
1
V
trr
Reverse Recovery Time
IF=
8A , dI/dt=100A/µs , TJ=25℃
---
12
---
nS
Qrr
Reverse Recovery Charge
---
3.5
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.
5mH,IAS=9A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Diode Characteristics
Guaranteed Avalanche Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Page 2
www.winsok.tw
Dec.2014
WSP4886
Dual N-Channel MOSFET
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---
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