WSP8205 datasheet(1/5 Pages) WIINSOK

部件名	WSP8205

功能描述	Dual N-Channel MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

网页	http://www.winsok.tw/index.html

标志

1 / 5 page

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Sou

rce Voltage

±

12

V

ID@Tc=25℃

Continuous Drain Current, VGS @ 4.5V

1

6.0

A

ID@Tc=70℃

Continuous Drain Current, VGS @ 4.5V

1

5.2

A

IDM

Pulsed Drain Current

2

20

A

PD@TA=25℃

Total Power Dissipation

3

1.25

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-ambient

1

---

100

℃

/W

RθJC

Thermal Resistance Junction-Case

1

---

70

℃

/W

BVDSS

RDSON

ID

20V

2

0mΩ

6.0A

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent Cdv/dt effect decline

Green Device Available

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Small power switching for MB/NB/UMPC/VGA

Networking DC-DC Power System

Absolute Maximum Ratings

Thermal Data

TSSOP

-8 Pin Configuration

Product Summery

WSP8205

Page 1

www.winsok.tw

Dec.2014

Dual N-Channel MOSFET

The WSP8205 is the highest performance trench

N-ch MOSFET with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the small power switching and load

switch applications.

The WSP8205 meet the RoHS and Green

Product requirement with full function reliability

approved.

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