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TLVB4200 数据表(PDF) 2 Page - Vishay Siliconix |
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TLVB4200 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page ![]() www.vishay.com 2 Document Number 83135 Rev. 1.4, 31-Aug-04 VISHAY TLVB4200 Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Blue TLVB4200 Typical Characteristics (Tamb = 25 °C unless otherwise specified) Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C Thermal resistance junction/ ambient RthJA 400 K/W Parameter Test condition Symbol Min Typ. Max Unit Luminous intensity IF = 15 mA IV 25 38 mlm Dominant wavelength IF = 10 mA λd 466 nm Peak wavelength IF = 10 mA λp 428 nm Angle of half intensity IF = 10 mA ϕ ± 85 deg Forward voltage IF = 20 mA VF 3.9 4.5 V Reverse voltage IR = 10 µAVR 5V Parameter Test condition Symbol Value Unit Figure 1. Power Dissipation vs. Ambient Temperature 100 80 60 40 0 25 50 75 100 125 Tamb - Ambient Temperature ( °C) 95 10904 20 0 Figure 2. Forward Current vs. Ambient Temperature for InGaN 0 10 20 30 40 60 15884 50 Tamb - Ambient Temperature ( °C) 100 80 60 40 20 0 |
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