2SB772-R datasheet(1/4 Pages) YFWDIODE

部件名	2SB772-R

功能描述	PNP Transistors

PDF	4 Pages

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制造商	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

网页	http://www.yfwdiode.com/

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2SB772 SOT-89

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www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

PNP Transistors

■

Features

●

PNP transistor High current output up to 3A

●

Low Saturation Voltage

●

Complement to 2SD882

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

-40

V

Collector to Emitter Voltage

VCEO

-30

V

Emitter to Base Voltage

VEBO

-6

V

Collector Current to Continuous

IC

-3

A

Collector Dissipation

Pc

0.5

W

Junction Temperature

TJ

150

℃

Storage Temperature

Tstg

-55 to 150

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

Ic=-100uA ,IE=0

-40

V

Collector-emitter breakdown voltage

VCEO

IC= -10 mA , IB=0

-30

V

Emitter-base breakdown voltage

VEBO

IE= -100 uA ,IC=0

-6

V

Collector cut-off current

ICBO

VCB=-40 V , IE=0

-1

μA

Emitter cut-off current

IEBO

VEB=-6V , IC=0

-1

μA

VCE= -2V, IC= -1A

60

400

VCE=-2V, IC= -100mA

32

Collector-emitter saturation voltage

VCE(sat)

IC=-2A, IB=- 0.2A

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-2A, IB= -0.2A

-1.5

V

Transition frequency

f T

VCE=-5 V, IC=-0.1mA,f = 10MHz

50

MHz

DC current gain

hFE

■

Classification of hfe(1)

Type

2SB772-R

2SB772-Q

2SB772-P

2SB772-E

Range

60-120

100-200

160-320

200-400

Marking

772R

772Q

772P

772E

1

2

3

■ Simplified outline(SOT-89)

1.Base

2.Collector

3.Emitter

■

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