2SB1132-R datasheet(1/4 Pages) YFWDIODE

部件名	2SB1132-R

功能描述	PNP Transistors

PDF	4 Pages

Scroll/Zoom	100%

制造商	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

网页	http://www.yfwdiode.com/

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2SB1132 SOT-89

1 / 4

www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

1

2

3

■ Simplified outline(SOT-89)

1.Base

2.Collector

3.Emitter

Features

Low VCE(sat)

Compliments to 2SD1664

PNP Transistors

Absolute Maximum Ratings Ta = 25

ti

n

U

g

n

it

a

R

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

V

e

g

a

tl

o

V

e

s

a

B

-r

o

t

c

e

ll

o

C

CBO

-40

V

e

g

a

tl

o

V

r

e

tt

i

m

E

-r

o

t

c

e

ll

o

C

CEO

-32

V

e

g

a

tl

o

V

e

s

a

B

-r

e

tt

i

m

E

EBO

-5

V

A

1

-

)

C

D

(

t

n

e

rr

u

C

r

o

t

c

e

ll

o

C

Single pulse, PW

A

2

-

s

m

0

1

=

P

n

o

it

a

p

i

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

*

0.5

W

T

e

r

u

t

a

r

e

p

m

e

t

n

o

it

c

m

u

J

j

150

T

e

g

n

a

R

e

r

u

t

a

r

e

p

m

e

t

e

g

a

r

o

t

S

stg

-55 to +150

* When mounted on a 40x40x0.7mm ceramic board.

IC

hFE Classification

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -50μA， IE=0

-40

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-32

Emitter - base breakdown voltage

VEBO

IE= -50μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -20 V , IE=0

-0.5

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-0.5

Collector-emitter saturation voltage

VCE(sat) IC=-500 mA, IB=-50mA

-0.2

-0.5

V

DC current gain

hFE

VCE= -3V, IC= -0.1A

82

390

Collector output capacitance

Cob

VCB= -10V, IE= 0mA,f=1MHz

20

30

pF

Transition frequency

fT

VCE= -5V, IE= 50mA,f=30MHz

150

MHz

V

uA

Type

2SB1132-P

2SB1132-Q

2SB1132-R

Range

82-180

120-270

180-390

Marking

BAP*

BAQ*

BAR*

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