2SB1424-R datasheet(1/3 Pages) YFWDIODE

部件名	2SB1424-R

功能描述	PNP Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

网页	http://www.yfwdiode.com/

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1 / 3 page

2SB1424 SOT-89

1 / 3

www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

S

■

Features

●

Excellent DC current gain

●

Low collector-emitter saturation voltage

●

Complementary to 2SD2150

■

Absolute Maximum Ratings Ta = 25℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 uA， IE=0

-20

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA, IB=0

-20

Emitter - base breakdown voltage

VEBO

IE= -100 uA， IC=0

-6

Collector-base cut-off current

ICBO

VCB= -20V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-2 A, IB=-100 mA

-0.5

Base - emitter saturation voltage

VBE(sat) IC=-2 A, IB=-100 mA

-1.2

DC current gain

hFE

VCE= -2V, IC= -100 mA

120

390

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

35

pF

Transition frequency

fT

VCE= -2V, IC= -500 mA,f=100MHz

240

MHz

V

uA

V

■

Classification of hfe

Type

2SB1424-Q

2SB1424-R

Range

120-270

180-390

Marking

AEQ

AER

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-20

Collector - Emitter Voltage

VCEO

-20

Emitter - Base Voltage

VEBO

-6

Collector Current - Continuous

IC

-3

A

Collector Power Dissipation

PC

500

mW

Thermal Resistance From Junction To Ambient

RθJA

250

℃

/W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

1

2

3

■

Simplified outline(SOT-89)

1.Base

2.Collector

3.Emitter

PNP Transistors

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